Wedge emitter fabrication using focused ion beam

Mo field emitters with a lateral wedge have been fabricated using a dual be am system consisting of a focused ion beam (FIB) and a field emission elect ron beam. A FIB process was applied to the fabrication of a lateral-type we dge field emitter. An emitter-collector gap for the wedge emitter gap produ ced by physical sputtering of the Mo layer on SiO2/Si by a FIB and subseque nt wet etching of the underlying silicon dioxide layer. Controlled gaps of 10-500 nm could be obtained by raster scanning of a FIB. An emission curren t of up to 2 muA was observed for a wedge emitter with a gap of 100 nm. (C) 2001 American Vacuum Society.