C. Ochiai et al., Fabrication process of field emitter arrays using focused ion and electronbeam induced reaction, J VAC SCI B, 19(3), 2001, pp. 933-935
Metal-gated Pt field emitter arrays (FEAs) have been manufactured using a d
ual beam system consisting of focused ion and electron beams. The gate open
ing in Nb or Au gate layers was produced by physical sputtering using a foc
used ion beam and subsequent wet etching of the underlying silicon dioxide
layer. Deposition of a platinum tip into the gate opening using electron-be
am-induced chemical reaction resulted in field emission without any thermal
annealing process. After wet etching an enlargement of the gate opening in
Nb-gated FEAs was observed due to the beam-induced enhanced etching. In co
ntrast, the smaller gate opening in Au-gated FEAs was easily fabricated bec
ause of the suppression of the enhanced etching. Consequently, the gate ope
ning was controlled by selection of the gate metal material. The turn-on vo
ltage for field emission decreased by decreasing the diameter of the gate o
pening. (C) 2001 American Vacuum Society.