Microwave-assisted chemical vapor deposition process for synthesizing carbon nanotubes

A chemical vapor deposition (CVD) process is described that uses a suscepto r to absorb the microwave and self-generate the heat for growing carbon nan otubes (CNTs) on a Si substrate. A high deposition rate of CNTs over a larg e area has been achieved, compared to the conventional CVD process, in whic h the reaction chamber was heated to the growing temperature (similar to 11 00 degreesC) to trigger the reaction between the CH4 gas species and the ca talyst. The modified CVD process possesses a pronounced advantage in the si mplicity of the react on chamber design because no external heating is requ ired. The size of the substrate is, in principle, unlimited as long as the susceptors can absorb the microwave uniformly. However, the design of the p rocessing chamber and the choice of susceptors are very critical for succes sfully growing the CNTs using such a microwave-assisted CVD process. (C) 20 01 American Vacuum Society.