Field activated lateral-type polysilicon emitter with extremely high emission current and very low turn-on voltage

A lateral-type poly-Si field emission device was fabricated by utilizing th e local oxidation of silicon (LOGOS) process and a simple and efficient act ivation technique of the tip end was proposed to achieve a high emission cu rrent. The fabricated single field emitter exhibits excellent electrical ch aracteristics such as a very low turn-on voltage of 2 V and an extremely hi gh current of similar to 500 muA at anode to cathode voltage of 30 V. These superior field emission characteristics are believed to be due to both an increased enhancement factor (beta) by appropriate activation and originall y sharpened tip by the LOGOS process. (C) 2001 American Vacuum Society.