Theoretical study of the threshold field for field electron emission from amorphous diamond thin films

Authors
Xu, NS She, JC Huq, SE Deng, SZ Chen, J
Citation
Ns. Xu et al., Theoretical study of the threshold field for field electron emission from amorphous diamond thin films, J VAC SCI B, 19(3), 2001, pp. 1059-1063
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
19
Issue
3
Year of publication
2001
Pages
1059 - 1063
Database
ISI
SICI code
1071-1023(200105/06)19:3<1059:TSOTTF>2.0.ZU;2-N
Abstract
Theoretical and numerical treatments were devoted to the derivation of the threshold field for field electron emission from amorphous diamond thin fil ms. Heavily doped n(++)-Si in the geometry of the tip was used as the catho de substrate. A three-step process involving internal emission, electron tr ansport in the coating, and vacuum emission was employed to understand the emission. The derivation results predict that the potential barrier height at the Si-diamond interface is the main parameter that governs the threshol d field for emission, which is consistent with the experimental phenomena t hat have been observed. (C) 2001 American Vacuum Society.