Robust high current field emitter tips and arrays for vacuum microelectronics devices

Citation
Fm. Charbonnier et al., Robust high current field emitter tips and arrays for vacuum microelectronics devices, J VAC SCI B, 19(3), 2001, pp. 1064-1072
Citations number
28
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
19
Issue
3
Year of publication
2001
Pages
1064 - 1072
Database
ISI
SICI code
1071-1023(200105/06)19:3<1064:RHCFET>2.0.ZU;2-D
Abstract
We seek to identify the most promising materials and geometries for field e mitter tips and arrays (FEA) in applications requiring stable high current and conductance in a moderate vacuum. Mo FEAs have been used successfully i n relatively high current (50-100 mA) TWTs. But molybdenum has some undesir able characteristics. For several years we have studied field emission from refractory carbides, particularly ZrC, and found that ZrC surfaces have ve ry desirable characteristics for stable high current field emission. We cal culate thermal effects and instabilities for five emitter materials and con clude that W or Mo emitters coated with a thin coating of ZrC have the high est current capability, particularly for dc emission. We then calculate bet a factors for,various field emission microdiodes and triodes. We conclude t hat broad cone angle ZrC/Mo emitters have the highest conductance capabilit y. We then discuss several factors which cause FEA performance to fall shor t of theoretical calculations in practice. We then review experiments with ZrC field emitters. We discuss individual single crystal ZrC field emitters made from zone refined ZrC single crystal wires, by the standard electroly tic etch technique or by a temperature enhanced field desorption technique which produces moderately sharp tips (50-100 nm) with broad cone half-angle s (0.5-0.6 radian). Hundreds of tips have been tested. Noisy but fairly sta ble emission of 200-300 muA has been achieved at up to 3 X 10(-5) Torr in a ir. At high vacuum (10(-9) Torr) de currents up to 25 mA and pulsed current s up to 100 mA have been achieved with fairly blunt (r congruent to 100 nm) , broad cone angle single tips, in fair agreement with calculations. We hav e fabricated small 10 X 10 FEAs made of bulk ZrC cones formed by physical v apor deposition, and show typical I(V) characteristics. Finally, we have co ated Mo FEAs with thin ZrC coatings and achieved a 30% reduction in turn on voltage due to the reduced work function of ZrC. Much remains to be done, particularly on the noise, stability, and life of high current ZrC or ZrC/M o FEAs at various pressures. (C) 2001 American Vacuum Society.