Ferroelectric memory was observed in {1-x SrBi2Ta2O9-x Bi3TiTaO9} material
for the composition x = 0.3. Thus, there is interest in the investigation o
f detailed properties of this material system. We report on the structural
and electrical properties of this material system using X-ray diffraction.
Raman spectroscopy, impedance spectroscopy. and ferroelectric measurements.
These studies suggest that high quality powder and thin films could be pre
pared for all compositions by a chemical solution route at the temperature
ranging from 650 to 750 degreesC. Ferroelectric response was also observed
in thin film (for x = 0.5) and pellet (for x = 0.0) samples. (C) 2001 Elsev
ier Science B.V. All rights reserved.