Oxygen precipitation in floating-zone silicon grown in hydrogen ambience and its application

Oxygen precipitates in the floating-zone silicon in hydrogen ambience [FZ(H ) Si] and in the neutron transmutation doping (NTD) FZ(H) Si were investiga ted by infrared (IR) spectroscopy at room temperature. In the intermediate temperature range, 600-850 degreesC. the apparent activation energies of 1. 4 and 1.2 eV were derived from Arrhenius plots of the product of the absorb ance at 1230 cm (1) and the half-peak breadth for the formation of oxygen p recipitates in the FZ(H) Si and in the NTD FZ(H) Si, respectively. The high temperature stability of the oxygen precipitates was only in the NTD FZ(H) Si. A denuded zone was obtained by denuding annealing and precipitating an nealing the NTD FZ(H) Si wafers. (C) 2001 Elsevier Science B.V. All rights reserved.