A study on the adhesion enhancement of polyetherimide to Si wafer using anAl-chelate treatment during multichip module fabrication

Citation
Hs. Ko et al., A study on the adhesion enhancement of polyetherimide to Si wafer using anAl-chelate treatment during multichip module fabrication, MAT SCI E B, 83(1-3), 2001, pp. 111-118
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
83
Issue
1-3
Year of publication
2001
Pages
111 - 118
Database
ISI
SICI code
0921-5107(20010621)83:1-3<111:ASOTAE>2.0.ZU;2-P
Abstract
Al-chelate coupling agent was successfully applied to improve the adhesion strength of a thermoplastic polyetherimide resin, Ultem 1000 (R) to a silic on wafer during the fabrication of multichip module (MCM) substrates, The o rigin of the enhanced adhesion strength achieved by applying Al chelate was also investigated using a surface characterization experiment and a theore tical approach. The peel strength of as-laminated Ultem film on an untreate d Si wafer was the same as that on a coupler-treated one right after lamina tion. However, the Ultem layer laminated on an untreated Si wafer lost its adhesion strength to zero within 24 h of 85 degrees /85% relative humidity (RH) aging. In contrast, the Ultem film laminated on the coupler-treated Si wafer maintained its adhesion strength even after 30 days of 85 degreesC/8 5% RH treatment. Atomic force microscopy (AFM), surface energy calculation using contact angle measurement, and high-resolution X-ray photoelectron sp ectroscopy (XPS) analysis were conducted to characterize the surface condit ions of a bare Si wafer and a coupler-treated Si wafer. It was revealed by the AFM experiment that the surface roughening caused by Al-chelate treatme nt was negligible, meaning that the enhanced adhesion stability during 85 d egreesC/85% RH aging is mainly attributed to the surface characteristic cha nge of Si substrate. Based on the results of XPS analysis and contact angle measurement, a model of surface bonding structure of an Al-chelate treated Si wafer was suggested and compared with that of a bare Si wafer. Finally, peel strength variation of Si wafers with and without the coupling agent a s a function of 85 degreesC/85% RH aging times can be explained by the zero point of charge consideration. Stable lamination based MCMs and micro-via build-up processes can also be obtained using these results. (C) 2001 Elsev ier Science B.V. All rights reserved.