Sj. Ding et al., Effects of thermal treatment on porous amorphous fluoropolymer film with alow dielectric constant, MAT SCI E B, 83(1-3), 2001, pp. 130-136
Amorphous fluoropolymer (AF thin films have been prepared from Teflon AF 16
00 solution by spin-coating. Scanning electron micrograph (SEM) observation
s reveal that the film has planar and compact surface without any pinhole,
and there are many pores in the matrix. By capacitance-voltage (C-V) and cu
rrent-voltage (I-V) measurements, the dielectric constant of the AF film is
equal to 1.57 at 1 MHz. and breakdown strength is 2.07 MV cm(-1). The Four
ier transform infrared spectroscopy (FTIR) spectra and X-ray diffraction (X
RD) patterns of the films show that the films have excellent thermal stabil
ity below 400 degreesC, and thermal treatment does not change amorphous nat
ure of the films. X-ray photoelectron spectroscopy (XPS) spectra reveal dec
omposition of CF3 groups due to annealing at 400 degreesC. leading to a rem
arkable increase in CF2 groups. Possible decomposition mechanisms of AF fil
m are also discussed. (C) 2001 Elsevier Science B.V. All rights reserved.