Real defect concentration measurements of nuclear detector materials by the combination of PICTS and SCLC methods

Citation
M. Ayoub et al., Real defect concentration measurements of nuclear detector materials by the combination of PICTS and SCLC methods, MAT SCI E B, 83(1-3), 2001, pp. 173-179
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
83
Issue
1-3
Year of publication
2001
Pages
173 - 179
Database
ISI
SICI code
0921-5107(20010621)83:1-3<173:RDCMON>2.0.ZU;2-P
Abstract
The measurement of the real defect concentration by Photo-induced current t ransient spectroscopy method (PICTS) is still unattainable owing to the pre sence of reflecting metal layer contacts that avoid the knowledge of the re al absorbed photons number and then the real photogenerated current in the sample. The combination of the two methods PICTS and space charge limited c urrent (SCLC) allows to the extraction of the mean apparent absorption coef ficient of the excitation light in the considered sample, as a consequence that leads to solve few main problems like: the scaling of PICTS spectra in term of real defect concentration and the mu tau product evolution. (C) 20 01 Elsevier Science B.V. All rights reserved.