Preparation and characterization of TiN films by electron cyclotron resonance (ECR) sputtering for diffusion barrier applications

An electron cyclotron resonance (ECR) plasma system has been used to deposi t TiN films by reactive sputtering process. The effect of magnetic mirror f ield on the current-voltage characteristics of the cylindrical sputtering c athode has been studied. Stoichiometric TiN films with minimum stress and s pecific resistivity of 82 mu Omega cm and surface roughness of 3 Angstrom h ave been deposited at a substrate temperature of 350 degreesC. The films sh owed strong (2 0 0) orientation on Si(1 0 0), Si(1 1 1) and glass substrate s. The use of TiN as a barrier layer in copper metalisation has been invest igated. No detectable diffusion was observed up to a temperature of 700 deg reesC for a film thickness of 600 Angstrom. The resistivity data is in conf ormity with the RES depth profiling. The quality of the films has been expl ained in terms of improved microstructure and packing density as a result o f high-density ion bombardment. (C) 2001 Elsevier Science B.V. All rights r eserved.