Local lifetime control by light ion irradiation: impact on blocking capability of power P-i-N diode

The impact of local lifetime control by H-1(+) and He-4(2+) irradiation on blocking characteristics of power P-i-N diodes was studied in the dose rang e up to 5 x 10(12) Cm-2. Energies and doses for both types of projectiles w ere chosen in a way to create a comparable damage in three qualitatively di fferent regions close to the anode junction. Blocking capabilities of irrad iated diodes were measured, compared and simulated. The results show that t here is no difference between hydrogen and helium irradiation if the damage is located inside the anode area. When the damage peak is placed into the N-base side of the anode junction and the dose of protons exceeds 10(12) cm (-2), blocking capability of the diode drastically decreases while it stays at the same level for analogous irradiation by helium ions. (C) 2001 Publi shed by Elsevier Science Ltd. All rights reserved.