SiC power DIMOS with double implanted Al/B P-well

Power 6H- and 4H-SiC DIMOS test structures have been fabricated using a new technology. P-well formation was optimised from simulation study and previ ous experiments on high-energy Al implantation. Reduction of Al presence at interface and reduced defect formation during implantation were the main o bjectives of this optimisation. Complementary surface implantation of boron was performed to adjust the interface (channel) doping. Power DIMOS were c haracterised at ambient temperature and up to 320 degreesC. 4H-SiC DIMOS ex hibits very poor characteristics while 6H-SiC device functionality is maint ained at 300 degreesC. Power DIMOS without complementary boron implantation also exhibits good performances up to 300 degreesC. (C) 2001 Published by Elsevier Science Ltd. All rights reserved.