Silicon-on-insulator power integrated circuits

A power integrated circuit process has been developed, based on silicon-on- insulator, which allows intelligent CMOS control circuitry to be placed alo ngside integrated high-voltage power devices. A breakdown voltage of 335 V has been obtained by using a silicon layer of 4 mum thickness together with a buried oxide layer of 3 mum thickness. The respective LDMOS specific on- resistance and LIGBT on-state voltage for this breakdown voltage were 148 m Omega cm(2) and 3.9 V, respectively. (C) 2001 Published by Elsevier Scienc e Ltd. All rights reserved.