Monolithic integration of a high-performance clustered insulated gate bipolar transistor with low-voltage components to form a 3 kV intelligent powerchip

For the first time, we evaluate the feasibility of monolithic integration o f low-voltage components, such as n and p channel MOSFETs, into a 3 kV nove l planar power semiconductor device, called the clustered insulated gate bi polar transistor, to realise an intelligent power chip. The power device em ploys MOS control with a thyristor to lower the on-state conduction losses and a unique self-clamping feature that provides current saturation at high gate voltages and enables the incorporation of low-voltage devices without any additional processing. This combination paves the way for realising an intelligent power chip with enhanced performance with respect to on-chip t emperature, overcurrent and over-voltage protection circuitry. (C) 2001 Pub lished by Elsevier Science Ltd. All rights reserved.