A monolithic IGBT gate driver for intelligent power modules implemented in0.8 mu m high voltage (50 V) CMOS process

Authors
Park, JM Kim, ED Kim, SC Kim, NK Bahng, W Song, GH Han, SB
Citation
Jm. Park et al., A monolithic IGBT gate driver for intelligent power modules implemented in0.8 mu m high voltage (50 V) CMOS process, MICROELEC J, 32(5-6), 2001, pp. 537-541
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS JOURNAL
ISSN journal
00262692 → ACNP
Volume
32
Issue
5-6
Year of publication
2001
Pages
537 - 541
Database
ISI
SICI code
0026-2692(200105/06)32:5-6<537:AMIGDF>2.0.ZU;2-A
Abstract
This paper discusses the design and implementation of a monolithic IGBT gat e driver for intelligent power modules (IPMs). The objective of this work i s to design and implement a monolithic IGBT gate driver IC with efficient p rotection functions in a high-voltage (50 V) 0.8-mum CMOS process. The gate driver is designed for medium power applications, such as home appliances. It includes low-voltage logic, 5-V logic regulator, analog control circuit ry, high-voltage (50 V) high-current output drivers, and protection circuit ry. (C) 2001 Published by Elsevier Science Ltd. All rights reserved.