A new instantaneous model of MESFET and HEMT devices for large-signal circuit design

Authors
Cicolani, M Di Martino, A D'Innocenzo, S Pisa, S Tommasino, P Trifiletti, A
Citation
M. Cicolani et al., A new instantaneous model of MESFET and HEMT devices for large-signal circuit design, MICROW OPT, 29(3), 2001, pp. 187-190
Citations number
11
Categorie Soggetti
Optics & Acoustics
Journal title
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
ISSN journal
08952477 → ACNP
Volume
29
Issue
3
Year of publication
2001
Pages
187 - 190
Database
ISI
SICI code
0895-2477(20010505)29:3<187:ANIMOM>2.0.ZU;2-B
Abstract
A nonlinear lumped-element model of MESFET and HEMT devices whose parameter s are empirical functions of instantaneous voltages at the controlling inte rnal nodes has been developed and used to design an X-band hybrid amplifier . Excellent agreement between measurements and simulated performance in sma ll-signal and nonlinear power characteristics has been obtained. (C) 2001 J ohn Wiley & Sons, Inc.