The crystallisation of deep amorphous wells in silicon produced by ion implantation

The crystallisation of deep amorphous wells is studied. These model systems are formed by high energy self implantation through a mask into silicon. T he amorphised regions have an aspect ratio opposite to that employed in pre vious experiments. At elevated temperatures crystallisation proceeds inward s with the amorphous-phase being transformed through both lateral and verti cal solid-phase epitaxy (SPE). Complementary information is obtained from p erforming plan view and cross-sectional transmission electron microscopy an alyses. It is discovered that the recovery of the amorphous material is gov erned by the dynamics of solid-phase epitaxy and that unique secondary stru ctures result from the heat treatment. (C) 2001 Elsevier Science B.V. All r ights reserved.