High-dose ion implantation into GaN

The structural characteristics of wurtzite GaN films bombarded up to high i on doses are studied by a combination of Rutherford backscattering/channeli ng spectrometry, transmission electron microscopy, and atomic force microsc opy. We concentrate on (i) the nature of structural disorder and the conseq uences of anomalous erosion observed in GaN exposed to ion bombardment at e levated temperatures and (ii) correlation between surface roughness and the development of a porous structure during implantation at liquid nitrogen t emperature. These anomalous morphological changes observed in GaN may have significant implications for the application of ion implantation in the fab rication of GaN-based devices. (C) 2001 Elsevier Science B.V. All rights re served.