Porous silicon implanted with nitrogen by plasma immersion ion implantation

Porous silicon (PS) samples were prepared on (1 0 0) monocrystalline silico n wafers and implanted with nitrogen by plasma immersion ion implantation ( PIII). Characterization by Auger electron spectroscopy (AES) showed the pre sence of the implanted nitrogen and also SiO2 and Si3N4 compounds on the sa mple surfaces. The effect of the implantation and consequently of the compo unds was analyzed measuring the reflectance for wavelengths between 200 nm and 800 nm on the implanted samples. The results show a strong reduction of the reflectance in the ultraviolet region of the spectrum, in agreement wi th a tendency for the intensity of the peak of the ultraviolet excited phot oluminescence to increase with the PIII treatment time. These characteristi cs can be explored and appropriately used in the fabrication of optoelectro nics devices based on PS. (C) 2001 Elsevier Science B.V. All rights reserve d.