Evaluation of free-carrier concentration in Si+-implanted InP by means of photoluminescence

Authors
Ibanez, J Cusco, R Artus, L de la Puente, E Jimenez, J
Citation
J. Ibanez et al., Evaluation of free-carrier concentration in Si+-implanted InP by means of photoluminescence, NUCL INST B, 175, 2001, pp. 246-251
Citations number
13
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
175
Year of publication
2001
Pages
246 - 251
Database
ISI
SICI code
0168-583X(200104)175:<246:EOFCIS>2.0.ZU;2-Y
Abstract
Optical techniques can provide nondestructive, contactless determinations o f foe-charge density in doped semiconductors. We discuss the use of photolu minescence spectra to evaluate the free-charge density of doped semiconduct or layers obtained by ion-beam implantation. A photoluminescence line-shape model that includes the conduction band nonparabolicity, band-tailing and band-gap narrowing effects is presented. The model is applied to Si+-implan ted InP samples with electron densities in the 5 x 10(16)-5 x 10(18) cm(-3) range. (C) 2001 Elsevier Science B.V. All rights reserved.