Emission channeling studies of implanted Er-167m in InP

We have used conversion electron emission channeling to determine the latti ce location of Er-167 (t(1/2) = 2.28 s) in TnP after 60 keV room temperatur e implantation of Tm-167 (t(1/2) = 9.25 d) at a dose of 6.8 x 10(12) cm(-2) . Following annealing at temperatures above the major recovery step of the implantation damage at 100-150 degreesC, we observe around 75% of Er on sub stitutional In sites. A smaller fraction of Er (6%) is found on substitutio nal P sites, the remainder on random sites. Annealing the unprotected InP c rystal at temperatures above 250 degreesC in vacuum causes a decrease in th e channeling effects. (C) 2001 Elsevier Science B.V. All rights reserved.