Citation
C. Heck et al., Electronic transport in thin Cr films modified by Fe ion implantation, NUCL INST B, 175, 2001, pp. 296-299
Citations number
14
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X
→ ACNP
Volume
175
Year of publication
2001
Pages
296 - 299
Database
ISI
SICI code
0168-583X(200104)175:<296:ETITCF>2.0.ZU;2-W
Abstract
Fe nanostructures were produced in Cr films by means of ion implantation fo
llowed by anneal at different temperatures. The magnetoresistance of these
systems is spin valve-like, but small (about 1%). The resistivity shows a v
ery broad minimum at fairly high temperatures, similar to the observed in a
morphous metals, spin or cluster glasses, or disordered materials. This can
be assigned to defect related scattering in these materials. (C) 2001 Else
vier Science B.V. All rights reserved.