A comparative study of vacancies produced by proton implantation of silicon using positron annihilation and deep level transient spectroscopy

Proton irradiation at an energy of 1 MeV has been used to create an approxi mately even distribution of simple point defects in both Ct and FZ, n-type silicon to a depth of greater than 10 mum. The implanted dose ranged from 1 x 10(11) to 1 x 10(16) cm(-1). The vacancy component of the defect concent ration has been quantitatively measured using positron annihilation and dee p level transient spectroscopy. Through careful experimental design it has been possible to meaningfully compare the concentrations independently dete rmined using the two approaches. Good agreement is found between the two te chniques for the FZ material adding credence to the methods through which d efect concentrations are obtained from the primary data. Somewhat less reas onable agreement is found for the Ct material for which one possible explan ation is offered. (C) 2001 Elsevier Science B.V. All rights reserved.