The effects of implantation temperature on He bubble formation in silicon

In the present contribution, we report experimental results on the formatio n of He-induced cavities in Ct grown (1 0 0) Si samples implanted with 40 k eV He+ ions to a fluence of 1 x 10(16) cm(-2) at four implantation temperat ures, 77, 133, 233 and 300 K, and submitted to rapid thermal annealing at 1 073 K for 600 s. The as-implanted samples were analyzed by Rutherford backs cattering/channeling spectrometry (RBS/C) and the annealed ones by transmis sion electron microscopy (TEM). The results obtained show that the characte ristics of the produced cavity systems depends significantly on the implant ation temperature. A correlation between the dynamic annealing behavior and the bubble nucleation process is proposed. (C) 2001 Elsevier Science B.V. All rights reserved.