Gettering centres in high-energy ion-implanted silicon investigated by point defect recombination

Self-interstitials were introduced by additional Si+ implantation into the vacancy-dominated depth range around half of the projected ion range, R-p/2 , of high-energy ion-implanted Si in order to balance radiation-induced exc ess vacancies. The undesired gettering of Cu atoms in this region (R-p/2 ef fect) could be suppressed. The threshold was determined necessary to remove the Cu gettering at R-p/2. It does approximately agree with the number of the calculated excess vacancies. Additional interstitial-type dislocation l oops were formed during annealing at R-p/2 as the Si+ fluence exceeds this threshold. Interstitial clusters were not proven to be the gettering centre s for Cu trapping. (C) 2001 Elsevier Science B.V. All rights reserved.