Nucleation and growth behavior of Cu-Al precipitates in He implanted and annealed aluminum

Citation
G. Feldmann et al., Nucleation and growth behavior of Cu-Al precipitates in He implanted and annealed aluminum, NUCL INST B, 175, 2001, pp. 432-436
Citations number
12
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
175
Year of publication
2001
Pages
432 - 436
Database
ISI
SICI code
0168-583X(200104)175:<432:NAGBOC>2.0.ZU;2-5
Abstract
The effects of He on the thermal evolution of Cu-Al precipitates produced a fter Cu+ and He+ implantation into pure Al foils were analyzed as a functio n of the implanted He fluence and post-implantation thermal annealing tempe rature. The profiles of Cu and He were measured via Rutherford backscatteri ng (RBS) and elastic recoil detection analysis (ERDA) techniques, The preci pitate and bubble morphology were investigated by transmission electron mic roscopy (TEM). In comparison to a sample implanted only with Cu+, we observ e that the presence of He leads to larger Cu-Al precipitates upon low-tempe rature annealing. For high-temperature annealing the situation is opposite, This behavior is discussed considering precipitate nucleation and growth p rocesses affected by the reduction in the vacancy field due to the formatio n of He bubbles, (C) 2001 Elsevier Science B.V, All rights reserved.