The damage accumulation in stabilized cubic ZrO2 single crystals irradiated
with low-energy Ar ions was investigated, combining Rutherford backscatter
ing/channeling (RBS/C) and slow positron implantation (SPIS) spectroscopies
. In the 3 x 10(14)-10(16) cm(-2) range, the fluence dependence of the dama
ge-induced dechanneling parameter (f(D)) exhibits three production stages (
labeled 1, 2 and 3) already reported for ion-irradiated ceramics and attrib
uted to the formation of small clusters and dislocation loops, either isola
ted or overlapping. Moreover, a precursory stage, never hitherto reported i
n RBS/C studies, is unveiled for fluences below 3 x 10(14) cm(-2). This "ne
w" stage (labeled 0) is confirmed by SPIS and attributed to clustering of s
mall vacancy-type defects. Although both techniques exhibit different speci
fic sensitivities to defects, similarities in the fluence dependence allow
to identify common limits to all observed damage production stages. (C) 200
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