Ti : sapphire formation via the co-implantation of Ti and O ions into sapphire

Sequential implants of Ti and O ions into Al2O3 lead to stabilisation of Ti in the optically active 3(+) oxidation state when suitable implantation an d annealing conditions are used. The presence of Ti3+ in sapphire gives ris e to luminescence over the wavelength range similar to 650-1100 nm and is t he basis of the broadly tunable Ti3+ in sapphire laser. We present results of Rutherford backscattering spectrometry and ion channeling (RBS-C) measur ements which show the structural changes that accompany increases in the Ti 3+ luminescence yield during post-implantation thermal processing of Ti/O i mplanted sapphire substrates. Complementary information is provided by prot on induced X-ray emission and channeling measurements indicating the lattic e location of the Ti atoms. (C) 2001 Elsevier Science B.V. All rights reser ved.