S. Taniguchi et al., Characterization of mechanical properties and microstructure of high-energy dual ion implanted metals, NUCL INST B, 175, 2001, pp. 647-651
The dual implantation of silicon and carbon ions into copper and iron was c
arried out with an MeV ion accelerator. Analysis by transmission electron m
icroscopy (TEM) revealed that the ion implanted layer of a Cu substrate is
crystalline, while that of an Fe substrate is amorphous. The hardness was m
easured as a function of the depth by a continuous stiffness measurement me
thod with a nano indenter. Dual ion implantation was found to enhance the h
ardness of a substrate, and the peak hardness occurred at a smaller depth t
han the peak concentration of the implanted layer. Cross-sectional TEM imag
es of ion implanted layers taken under the indentations with various depth
showed that the indenter did not fracture the implanted layer, but rather d
eformed it plastically. These data provide us with a qualitative understand
ing of the hardening mechanism. (C) 2001 Elsevier Science B.V. All rights r
eserved.