Low energy nitrogen implantation into Si and SiO2/Si

We report on N doses and profiles in Si and (ultra)thin SiO2 films on Si ni trided by plasma or ion beam processing in the 3-1000 eV energy range. Accu rate elemental quantification was performed by nuclear reaction analysis (N RA), and elemental profiling with subnanometer depth resolution was achieve d by narrow nuclear resonance profiling (NNRP) or medium energy ion scatter ing (MEIS). Heavy and shallow nitrogen incorporation was observed up to 0.7 N/(N + O) and peak N concentrations at 2 nm and less from the sample surfa ce. Device-quality films were produced with post-nitridation annealing in O -2, as indicated by C-V and I-V measurements. (C) 2001 Elsevier Science B,V . All rights reserved.