Electrical and optical effects of He+ ion irradiation in InGaP/GaAs/InGaAslasers

Effects of He+ ion irradiation in InGaP/GaAs multilayered laser structures with 7 nm InGaAs quantum wells (QWs) have been investigated. Two versions o f the ion irradiation were performed. (I) into the complete structure, and (II) into ;the structure after a removing the p(++)-GaAs contact layer. In case I, two-energy He+ ion implantation includes a 20 keV irradiation for a n isolation of p(++)-GaAs and a 170 keV irradiation for the isolation of th e p-InGaP cladding layer. In case II, a one-energy (100 keV) implantation i s used. Front-side photoluminescence studies show an appearance of the QW e mission peak at 9260 Angstrom in ion irradiated structures. This transparen cy effect was attributed to a reduction in a free-carrier absorption in the InGaP layers. (C) 2001 Elsevier Science B.V. All rights reserved.