Growth and magnetic anisotropy of thin W(110)/Co films on Al2O3(11(2)over-bar0) - art. no. 224415

Citation
R. Sellmann et al., Growth and magnetic anisotropy of thin W(110)/Co films on Al2O3(11(2)over-bar0) - art. no. 224415, PHYS REV B, 6322(22), 2001, pp. 4415
Citations number
43
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6322
Issue
22
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010601)6322:22<4415:GAMAOT>2.0.ZU;2-J
Abstract
The growth and magnetism of thin W(110)/Co films deposited by molecular bea m epitaxy on single-crystal sapphire Al2O3(11 (2) over bar0) substrates is investigated. Low-energy electron diffraction analysis shows that the Co fi lms grow on the epitaxial W(110) substrate layer with a constant lattice st rain up to a Co thickness de, = 20 Angstrom. Pseudomorphic growth is found for the W[1 (1) over bar 0] direction. The thickness-dependent magnetic ani sotropy is studied in situ at T = 300 K by means of magneto-optical Kerr-ef fect measurements on a Co wedge-shaped sample prior and after coverage with a Au overlayer. After the coverage the Co wedge reveals a perpendicular ma gnetic anisotropy for small Co film thickness followed by a spin-reorientat ion transition from out-of-plane to in-plane alignment of the magnetization vector in the thickness regime 7 Angstrom less than or equal to d(Co) less than or equal to 9 Angstrom. Spin-dependent neutron reflectivity data prov ide evidence for a pronounced magnetic anisotropy within the film plane eve n for relatively thick Co films. The observed decrease of the splitting bet ween spin-up and spin-down reflectivities for decreasing temperature indica tes that the spin-reorientation transition of the system W(110)/ Co/Au can also be induced thermally.