Competitive growth model involving random deposition and random depositionwith surface relaxation - art. no. 066132

Citation
Cm. Horowitz et al., Competitive growth model involving random deposition and random depositionwith surface relaxation - art. no. 066132, PHYS REV E, 6306(6), 2001, pp. 6132
Citations number
25
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW E
ISSN journal
1063651X → ACNP
Volume
6306
Issue
6
Year of publication
2001
Part
2
Database
ISI
SICI code
1063-651X(200106)6306:6<6132:CGMIRD>2.0.ZU;2-T
Abstract
A deposition model that considers a mixture of random deposition with surfa ce relaxation and a pure random deposition is proposed and studied. As the system evolves, random deposition with surface relaxation (pure random depo sition! take place with probability p and (l-p), respectively. The discrete (microscopic) approach to the model is studied by means of extensive numer ical simulations, while continuous equations are used in order to investiga te the mesoscopic properties of the model. A dynamic scaling ansatz for the interface width W(L,t,p) as a function of the lattice side L, the time t a nd p is formulated and tested. Three exponents, which can be linked to the standard growth exponent of random deposition with surface relaxation by me ans of a scaling relation, are identified. In the continuous limit, the mod el can be well described by means of a phenomenological stochastic growth e quation with a p-dependent effective surface tension.