Citation
Ni. Nurgazizov et al., AFM investigation of radiation damage distribution in implanted silicon oxide, PHYS LOW-D, 3-4, 2001, pp. 97-102
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICS OF LOW-DIMENSIONAL STRUCTURES
ISSN journal
02043467
→ ACNP
Volume
3-4
Year of publication
2001
Pages
97 - 102
Database
ISI
SICI code
0204-3467(2001)3-4:<97:AIORDD>2.0.ZU;2-A
Abstract
Wet etching of the local implanted silicon dioxide layer on silicon substra
te was studied ia-situ by atomic force microscopy (AFM) A good agreement be
tween the computer simulated ion distribution and the ex perimental depth p
rofile of the enhancement ratio of the etching rate shows that this AFM met
hod of investigation of implanted samples allows to correctly estimate the
thickness of implanted surface layer.