The relation between composition and sizes of GeSi/Si(001) islands grown at different temperatures

Authors
Vostokov, NV Gusev, SA Drozdov, YN Krasilnik, ZF Lobanov, DN Mesters, N Miura, M Moldavskaya, LD Novikov, AV Pascual, J Postnikov, VV Shiraki, Y Uakhimchuk, VA Usami, N Valakh, MY
Citation
Nv. Vostokov et al., The relation between composition and sizes of GeSi/Si(001) islands grown at different temperatures, PHYS LOW-D, 3-4, 2001, pp. 295-301
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICS OF LOW-DIMENSIONAL STRUCTURES
ISSN journal
02043467 → ACNP
Volume
3-4
Year of publication
2001
Pages
295 - 301
Database
ISI
SICI code
0204-3467(2001)3-4:<295:TRBCAS>2.0.ZU;2-U
Abstract
The effect of alloying on growth and parameters of GeSi self-assembled isla nds has been investigated by atomic force microscopy, Raman scattering and X-ray analysis. A decrease of the islands sizes with reduction of growth te mperature is associated with an increase of Ge content in the islands. Enha ncement of alloying and coarsening of islands grown at 750 degreesC causes a spread of the island size distribution. A transition of the islands shape from dome to pyramid has been observed directly during Ge deposition at th is temperature.