Synthesis of GaAs nanoparticles embedded in SiO2 matrix by radio frequencyco-sputtering technique

Authors
Pal, U Bautista-Hernandez, A Koshizaki, N Sasaki, T Terauchi, S
Citation
U. Pal et al., Synthesis of GaAs nanoparticles embedded in SiO2 matrix by radio frequencyco-sputtering technique, SCR MATER, 44(8-9), 2001, pp. 1841-1846
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SCRIPTA MATERIALIA
ISSN journal
13596462 → ACNP
Volume
44
Issue
8-9
Year of publication
2001
Pages
1841 - 1846
Database
ISI
SICI code
1359-6462(20010518)44:8-9<1841:SOGNEI>2.0.ZU;2-7
Abstract
Nanoparticles of GaAs embedded in SiO2 matrix were prepared by radio a freq uency co-sputtering technique. The content of GaAs in the composite films w as varied by varying the number of pieces of GaAs co-targets on a SiO2 targ et. The as-grown composite films were amorphous in nature, the optical abso rption spectra of the films revealed a large shift in the optical band gap of GaAs, which partly corresponds to the strong quantum confinement of elec trons and holes in the nanoparticles and is partly due to their amorphous n ature. (C) 2001 Acta Materialia Inc. Published by Elsevier Science Ltd. All rights reserved.