Thick ceramic films in the systems TiO2 and Ti-O-Si consisting of nanocryst
alline grains between 15 and 45 nm are prepared by a modified Chemical Vapo
r Deposition (CVD) method; the Chemical Vapor Synthesis (CVS). Film formati
on iri performed under helium flow in a hot wall reactor by pyrolysis of me
tal-organic compounds silicon substrates. One-dimensional gradients of comp
osition are achieved by adjusting precursor massflows; gradients of microst
ructure are obtained by variation the reactor temperature during the proces
s. The influence of process parameters; specifically temperature and precur
sor flow examined. The microstructure evolves from columnar grains; Typical
for CVD; To nanocrystalline grains creating an increasing porosity normal
to the substrate. (C) 2001 Acta Materialia Inc. Published by Elsevier Scien
ce Ltd. All rights reserved.