Fully depleted SOICMOS technology for heterogeneous micropower, high-temperature or RF microsystems

Authors
Flandre, D Adriaensen, S Akheyar, A Crahay, A Demeus, L Delatte, P Dessard, V Iniguez, B Neve, A Katschmarskyj, B Loumaye, P Laconte, J Martinez, I Picun, G Rauly, E Renaux, C Spote, D Zitout, M Dehan, M Parvais, B Simon, P Vanhoenacker, D Raskin, JP
Citation
D. Flandre et al., Fully depleted SOICMOS technology for heterogeneous micropower, high-temperature or RF microsystems, SOL ST ELEC, 45(4), 2001, pp. 541-549
Citations number
40
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
4
Year of publication
2001
Pages
541 - 549
Database
ISI
SICI code
0038-1101(200104)45:4<541:FDSTFH>2.0.ZU;2-1
Abstract
Based on an extensive review of research results on the material, process, device and circuit properties of thin-film fully depleted SOI CMOS, our wor k demonstrates that such a process with channel lengths of about 1 mum may emerge as a most promising and mature contender for integrated microsystems which must operate under low-voltage low-power conditions, at microwave fr equencies and/or in the temperature range 200-350 degreesC. (C) 2001 Elsevi er Science Ltd. All rights reserved.