Thermally activated processes in the buried oxide of SIMOX SOI structures and devices

This paper is devoted to the analysis of the electrical processes in SOI SI MOX structures in a wide temperature range (from 4 to 700 K) by a combinati on of capacitance-voltage and thermally stimulated current techniques. It h as been shown that application of such techniques at cryogenic temperatures allows to study the processes in the transition layer and in the buried in sulator/substrate interface. Employing a combination of these methods at hi gh temperatures gives the possibility to investigate emission from and trap ping at deep traps and to determine the localization of such traps. It has been shown that high-temperature charge instability processes in the buried oxide adversely affect the SOI MOSFET operation. (C) 2001 Elsevier Science Ltd. All rights reserved.