Charge based modeling of the inner fringing capacitance of SOI-MOSFETs

In this paper we focus on the quasi-static modeling of SOI-MOSFETs, First w e discuss general considerations of charge based modeling in semiconductor devices. Advantages and disadvantages of charge based formulations will be discussed, Next a compact SOI model which has bern developed by our group w ill be introduced, This model includes the description of the smooth transi tion between fully depleted and partially depleted operating modes. Utilizi ng this model a charge based formulation of the inner fringing capacitance in an SOI-MOSFET will be presented. Results of this new model will be compa red to those gained by numerical device simulation. (C) 2001 Elsevier Scien ce Ltd. All rights reserved.