Electron transport in silicon-on-insulator devices

Authors
Gamiz, F Roldan, JB Lopez-Villanueva, JA Cartujo-Cassinello, P Carceller, JE Cartujo, P Jimenez-Molinos, F
Citation
F. Gamiz et al., Electron transport in silicon-on-insulator devices, SOL ST ELEC, 45(4), 2001, pp. 613-620
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
4
Year of publication
2001
Pages
613 - 620
Database
ISI
SICI code
0038-1101(200104)45:4<613:ETISD>2.0.ZU;2-Y
Abstract
The electron transport in single-gate and double-gate silicon-on-insulator devices is studied as a function of the transverse electric field and the s ilicon layer thickness, with particular attention to the evaluation of stat ionary drift velocity and low-field mobility at room temperature. (C) 2001 Elsevier Science Ltd. All rights reserved.