Intense ultraviolet photoluminescence from amorphous Si : O : C films prepared by liquid-solution-phase technique

Intense ultraviolet (W) photoluminescence (PL) was observed at room tempera ture from amorphous Si:O:C films synthesized at 200, 300, 400 degreesC by t he liquid-solution-phase (LSP) method. The intensity was as strong as that of visible emission band from porous silicon. In all the films, a band exis ted, centered at 340 mn, while a shoulder band centered at 380 nm was obser ved from the films deposited at 400 degreesC. By analyzing the PL and photo luminescence excitation (PLE) spectra, Fourier-transform infrared (FTIR) ab sorption, X-ray photoelectronic spectroscopy (XPS) and X-ray diffraction (X RD), we suggest that the photoluminescence peak at 340 nm originates from t he defects in silicon oxide network, while the peak at 380 nm may be relate d to Si-C and Si-Si bonds in the samples. (C) 2001 Elsevier Science B.V. Al l rights reserved.