A conforming exponentially fitted finite element scheme for the semiconductor continuity equations in 3D

Authors
Angermann, L Wang, S
Citation
L. Angermann et S. Wang, A conforming exponentially fitted finite element scheme for the semiconductor continuity equations in 3D, Z ANG MA ME, 81, 2001, pp. S755-S756
Citations number
4
Categorie Soggetti
Mechanical Engineering
Journal title
ZEITSCHRIFT FUR ANGEWANDTE MATHEMATIK UND MECHANIK
ISSN journal
00442267 → ACNP
Volume
81
Year of publication
2001
Supplement
3
Pages
S755 - S756
Database
ISI
SICI code
0044-2267(2001)81:<S755:ACEFFE>2.0.ZU;2-7
Abstract
The paper presents an exponentially fitted tetrahedral Finite element metho d for the decoupled continuity equations in the drift-diffusion model of se miconductor devices. This finite element method is based on a set of piecew ise exponential basis functions constructed on a tetrahedral mesh. Error es timates for the approximate solution and its associated flux are given, whe re the error bounds depend on some first-order seminorms of the exact solut ion, the exact flux and the coefficient function of the convection terms.