TiN(O)-TiO2 thin films were prepared on Si(1 0 O) by the low pressure organ
o metallic chemical vapor deposition (LPOMCVD) method, using ammonia and ti
tanium isopropoxide as precursors. In order to complete previous characteri
zations, an Ar+ bombardment/XPS coupled study was carried out. This method
is based on the fact that the behavior of a compound towards an ion bombard
ment is a function of its composition. In particular, Ar+ bombardment of Ti
O2 (whatever its form) leads to a preferential sputtering of oxygen atoms w
ith subsequent reduction of titanium and formation of Ti3+ and Ti2+ easily
detectable by XPS from a significant broadening of the Ti 2p lines. In the
opposite, no broadening of the Ti 2p lines is observed for an Arf bombardme
nt of TiN. Then, with this method, we succeed in showing that films obtaine
d at high temperature (greater than or equal to 700 degreesC) contain only
a TiNxOy phase which is isomorphic to TiN. In the coatings, synthesized at
low temperatures (less than or equal to 650 degreesC) amorphous TiO2 has be
en evidenced. (C) 2001 Elsevier Science B.V. All rights reserved.