Formation of beta-SiC nanocrystals on Si(111) monocrystal during the HFCVDof diamond

Authors
Le Normand, F Arnault, JC Pecoraro, S Werckmann, J
Citation
F. Le Normand et al., Formation of beta-SiC nanocrystals on Si(111) monocrystal during the HFCVDof diamond, APPL SURF S, 177(4), 2001, pp. 298-302
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
177
Issue
4
Year of publication
2001
Pages
298 - 302
Database
ISI
SICI code
0169-4332(20010615)177:4<298:FOBNOS>2.0.ZU;2-L
Abstract
In this study thin Si(1 1 1) sample was prepared for top view observations by high resolution transmission electron microscopy (HRTEM). The very first steps of diamond nucleation on Si(1 1 1) by a HFCVD process are studied. W e detect the polycrystalline growth of silicon carbide grains with a genera l pseudoepitaxic orientation SiC{2 2 0}//Si{2 2 0}. They are relied by diso riented SiC grains. (C) 2001 Elsevier Science B.V. All rights reserved.