K. Ushida et al., SUBPICOSECOND CARRIER DYNAMICS IN GAAS STUDIED WITH OPTICAL HETERODYNE-DETECTION, Solid state communications, 103(9), 1997, pp. 525-527
The transient reflectivity change in GaAs has been studied using an op
tical heterodyne detection technique with femtosecond laser pulses (FW
HM = 65 fs) at 800 nm. An oscillation due to carrier density and/or sp
in density fluctuations has been observed on the transient reflectivit
y change and its decay time was estimated to be 250 +/- 40 fs. (C) 199
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