NON-LANGEVIN RECOMBINATION IN DISORDERED MATERIALS WITH RANDOM POTENTIAL DISTRIBUTIONS

A concept of random spatial fluctuations in the potential landscape of disordered semiconductors is employed to explain the effect of suppre ssed charge carrier recombination in these materials. The rate of bimo lecular recombination is shown to be anomalously low due to spatial se paration of electrons and holes in the fluctuating potential landscape . Photoexcited carriers can avoid geminate recombination due to the ef fect of a sufficiently strong local electric field coupled to the pote ntial fluctuations. (C) 1997 Elsevier Science Ltd.