Predictive process simulation and stress-mediated diffusion in silicon

Citation
W. Windl et al., Predictive process simulation and stress-mediated diffusion in silicon, COMPUT SC E, 3(4), 2001, pp. 92-95
Citations number
10
Categorie Soggetti
Multidisciplinary,"Computer Science & Engineering
Journal title
COMPUTING IN SCIENCE & ENGINEERING
ISSN journal
15219615 → ACNP
Volume
3
Issue
4
Year of publication
2001
Pages
92 - 95
Database
ISI
SICI code
1521-9615(200107/08)3:4<92:PPSASD>2.0.ZU;2-Q